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New technology

PIMITES: Precision Integrated Micro Technologies & Systems
PIMITES encompasses the following technologies:
  • MEMS technology: Micro Electrical Mechanical Systems, a semiconductor fabrication technology
  • MIPTEC technology: Microscopic Integrated Processing TEChnology, Panasonic's preferred term for MID technology (Molded Interconnected Device)
  • n (nano) technology: fabrication, modification and analysis technology at the nm level

Panasonic has long placed great emphasis on developing devices that are compact, high speed, and high performance. In September 2005, preparations were completed for mass production of devices based on PIMITES technologies.


MIPTEC: Microscopic Integrated Processing Technology
MIPTEC technology is used to create three-dimensional injection-molded circuit components by forming an electrical circuit on a molded component surface. Panasonic has advanced this process with a proprietary surface activation technology and laser-patterning technique, which yields precise, 3D circuit patterns, to which bare chips can be mounted. Parts are made to order.

MEMS: Micro Electro Mechanical Systems
MEMS technology is the integration of semiconductor manufacturing technology, electric circuit technology, and mechanical technology. MEMS are also referred as micro machining or micro system technology.

The work scale is generally on the mm level (from a few to several hundred mm), placing MEMS between nano technology, which targets the molecular or nm level, and conventional machining methods (from a few mm to several m).


n (nano) technology
Nano technology generally refers to techniques for forming shapes several nm to several hundreds of nm in size. "Nano work"
(1nm = 10-9m) requires 1000 times the precision of "micro work" (1mm = 10-6m).

Focusing on sensors, Panasonic Electric Works has pursued the development of bulk MEMS technology that shapes an entire silicon wafer three-dimensionally. This technology includes advanced techniques such as high aspect ratio etching (meaning that the depth of the trench is greater than the width), through-hole formation, high-precision fabrication using SOI (Silicon on Insulator, i.e. bonded boards), and the joining of silicon wafers to glass wafers.




 
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